A recurrent attention model (RAM) algorithm for Keyword Spotting (KWS) is proposed.
An evolving index of research papers and books I've read, with my notes on what matters and why.
Yujin Kim, Faraz Tahmasebi, Gunjae Koo, Hyoukjun Kwon — Korea University, UC Irvine
The authors apply low-precision (8-bit) LNS, and adaptively assign bits for the integer and fraction depending on the data distribution, which enables near FP16 accuracy/perplexity. We also co-design the LNS arithmetic and accelerator architecture, which leads to 33% less energy than FP8 (E4M3) accelerator with similar area as an INT8 accelerator, while delivering 30% lower perplexity compared to FP8 (E4M3).
IEEE Micro Special Issue · 2026
Leland Chang et. al. — IBM T. J. Watson Research Center
An eight-transistor (8T) SRAM cell is proposed to improve variability tolerance and low-voltage operation in high-speed SRAM caches. No need for secondary or dynamic power supplies. The proposed 8T solution is demonstrated in a high-performance 32 kb subarray designed in 65 nm PD-SOI (Partially-Depleted Silicon-On-Insulator) CMOS that operates at 5.3 GHz at 1.2 V and 295 MHz at 0.41 V.
Journal of Solid-State Circuits (JSSC) · 2008
Must ReadJ-C. Tien et. al. — National Tsing Hua University and TSMC in Hsinchu, Taiwan
A reconfigurable 2’s-complement and sign-magnitude scheme integrated within a versatile-format CIM macro supporting MX, LNS, FP, and INT for MAC operations.
Stats: 16nm 72kb gain-cell array, energy efficiency of 120.5TFLOPS/W and throughput density of 3.18 TOPS/mm2 in MXINT8 mode.
IEEE International Solid-State Circuits Conference (ISSCC) · 2026
Good